www. belling .com . cn 1 ldo mode ovp with integrated p - mosfet b l8596 description the BL8596 is li+ charger ic with integrated p - mosfet. the device is fabricated with advanced cmos technology to achieve maintaining low static power dissipation over a very broad vcc operating range. the BL8596 integrates a p - mosfet and s chottky diode which is normally a discrete device employed for conventional battery charging design of mobile phone system. in addition to that, BL8596 works like a ldo mode to keep chrin voltage stable when acin goes high. and thus it will not trigger the chrin pin over - voltage protection when acin voltage increased to as high as 1 5 v . the BL8596 provides complete li+ charger protections and saves the external mosfet and schottky diode for the charger of cell phones pmic. it is available in a dfn2x2 - 8l pa ckage. the above features and small package make the BL8596 an ideal part for cell phones applications. features ? a built - in p - mosfet ? ldo mode makes chrin voltage stable around 5.5v ? range of operation input voltage: max 1 5 v ? c harging current up to 1 a ? en vironment temperature: - 2 0 ? c ~85 ? c applications ? cell phone and other p ortable device application circuit ordering information / pin configuration / marking BL8596 ck b tr dfn2x2 - 8 l BL8596 c b6 tr sot 2 3 - 6 l top marking ob yw yw means the year and week parts being manufactu red, subjected to change. o b is the code of the product; it will not be changed on any part. bl 8 596
www. belling .com .cn 2 b l 859 6 absolute maximum rating (n ote 1) parameter symbol r ate unit acin input voltage (acin to gnd) v acin - 0.3~15 v chrin to gnd voltage v chrin - 0.3~6 v gatdrv to gnd voltage v gatdrv - 0.3~ v chrin v out to gnd voltage v out - 0.3~6 v output power limit, iout x (v acin - v out ) p d 0.75 w maximum junction temperature t j 1 5 0 ? c storage temperature t stg - 40 to 150 maximum lead soldering temper ature, 10 seconds t sdr 260 note 1 : absolute maximum ratings are those values beyond which the life of a device may be impaired. exposure to absolute maximum rating conditions for extended periods may destroy the device . thermal resistance rating parame ter device symbol typical unit junction - to - ambient resistance in free air (note2) dfn2 x2 - 8 ? ja 80 ? c /w sot 2 3 - 6 ? ja 235 ? c /w note 2 : ? ja is measured with the component mounted on a high effective thermal conductivity test board in free air. the ex posed pad of dfn2x2 - 8 is soldered directly on the pcb. thermal consideration even though BL8596 can handle charge current larger than 1a, it is also limited by the power dissipation of the package dfn2x2 - 8l. the dfn2x2 package has a thermal pad exposed, and it should be tightly soldered to bottom pcb with a large coil area to dissipate the heat. in general, to have the BL8596 to work under a safe condition, one should take dfn2x2 power limit as 0.75w, and if the dropout voltage is 1.5v, one is suggested t o set the charging current to be less than 500ma. recommended operation conditions symbol parameter range unit v acin acin input voltage (acin to gnd) 4.5~10 v iout ooutput current 0~700 ma t a ambient temperature - 40~85 ? c t j junction temper ature - 40~125 ? c electrical characteristics tj=25 ? c symbol parameter conditions min typ max unit vth threshold voltage ids= - 1ua, vds=vgs - 1.0 - 0.7 - 0.4 v v chrin 2 chrin voltage v in = 6.0 v , i chrin =50ma 5.0 5.5 6.0 v idss1 off - state leakage v out =0, v i n =10 v , v gatdrv =v chrin1 - - 1 u a idss2 reverse block leakage v out =5v, v in =0, v gatdrv =v chrin1 =0 v 2 5 ua idson on C state drain current v in =5v, v out =4v, v gatdrv =1v 0.9 1. 2 1.5 a rdson vds/idson vs=5v, vg=1v, vd=4v 0.5 0.75 1 ohm
www. belling .com .cn 3 b l 859 6 typical performance chara cteristics t=25 c unless specified.
www. belling .com .cn 4 b l 859 6 package out line package dfn2x2 - 8 devices per reel 3000 unit m m package specification package sot23 - 6 devices per reel 3000 unit m m package specification
|
